Interface Optimization and Thermal Conductivity of Cu/Diamond Composites by Spark Plasma Sintering Process.

Junfeng Zhao, Hao Su, Kai Li, Haijuan Mei, Junliang Zhang, Weiping Gong

Abstract read

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Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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6 authors.

Junfeng ZhaoGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, China.

Hao SuGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, China.

Kai LiGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, China.

Haijuan MeiGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, China.

Junliang ZhangGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, China.

Weiping GongGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, China.ORCID 0000-0002-3761-2671

Funding

Featured Innovation Project of General Colleges and Universities in Guangdong Province 2022KTSCX137

6 · The paper itself

Abstract

Cu/Diamond (Cu/Dia) composites are regarded as next-generation thermal dissipation materials and hold tremendous potential for use in future high-power electronic devices. The interface structure between the Cu matrix and the diamond has a significant impact on the thermophysical properties of the composite materials. In this study, Cu/Dia composite materials were fabricated using the Spark Plasma Sintering (SPS) process. The results indicate that the agglomeration of diamond particles decreases with increasing particle size and that a uniform distribution is achieved at 200 μm. With an increase in the sintering temperature, the interface bonding is first optimized and then weakened, with the optimal sintering temperature being 900 °C. The addition of Cr to the Cu matrix leads to the formation of Cr

Indexed as

Cu/diamondinterface structurethermal conductivity

Identifiers

PMID39791831

DOI10.3390/nano15010073

PMCPMC11722854

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