Evidence map›Paper›PMID 39791810›Full record

ArticleNanomaterials (Basel, Switzerland)2024

Controlling the Crystallinity and Morphology of Bismuth Selenide via Electrochemical Exfoliation for Tailored Reverse Saturable Absorption and Optical Limiting.

Hao Yan, Bingxue Li, Junjie Pan, Xuan Fang, Yongji Yu, Dengkui Wang, Dan Fang, Yanyan Zhan, Xiaohua Wang, Jinhua Li and 2 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Hao YanState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.
Bingxue LiState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.
Junjie PanState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.
Xuan FangState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.ORCID 0000-0003-2290-4951
Yongji YuState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.
Dengkui WangState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.
Dan FangState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.
Yanyan ZhanState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.
Xiaohua WangState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.
Jinhua LiState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.
Xiaohui MaState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.
Guangyong JinState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.

Funding

National Natural Science Foundation of China 62074018Natural Science Foundation of Chongqing cstc2021jcyj-msxmX1087the Developing Project of Science and Technology of Jilin Province 20210101150JC
6 · The paper itself

Abstract

As an emerging two-dimensional (2D) Group-VA material, bismuth selenide (Bi

Indexed as

Bi2Se3electrochemistrynonlinear optical absorptionOA Z-scan techniquereverse saturable absorption

Identifiers

PMID39791810
PMCPMC11723395

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.