Evidence map›Paper›PMID 39772696›Full record

ArticleScience advances2025

Tunable in-plane conductance anisotropy in 2D semiconductive AgCrP

Yujie Sun, Rongjie Zhang, Junyang Tan, Shengfeng Zeng, Shengnan Li, Qiang Wei, Zhi-Yuan Zhang, Shilong Zhao, Xiaolong Zou, Bilu Liu and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Science advances, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. On the Ordering Mechanism of CuAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Yujie SunShenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, PR China.ORCID 0009-0001-7266-0193
Rongjie ZhangShenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, PR China.
Junyang TanShenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, PR China.
Shengfeng ZengShenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, PR China.
Shengnan LiShenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, PR China.
Qiang WeiShenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, PR China.
Zhi-Yuan ZhangShenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, PR China.
Shilong ZhaoSchool of Electronic Information Engineering, Foshan University, Foshan 528000, PR China.ORCID 0000-0001-9491-4337
Xiaolong ZouShenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, PR China.
Bilu LiuShenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, PR China.ORCID 0000-0002-7274-5752
Hui-Ming ChengInstitute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, PR China.ORCID 0000-0002-5387-4241

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

In-plane anisotropic two-dimensional (2D) semiconductors have gained much interest due to their anisotropic properties, which opens avenues in designing functional electronics. Currently reported in-plane anisotropic semiconductors mainly rely on crystal lattice anisotropy. Herein, AgCrP

Identifiers

PMID39772696
PMCPMC11708896

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.