Evidence map›Paper›PMID 39770252›Full record

ArticleMicromachines2024

Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al

Hongxuan Guo, Jiahao Yao, Siyuan Chen, Chong Qian, Xiangyu Pan, Kuibo Yin, Hao Zhu, Xu Gao, Suidong Wang, Litao Sun

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Micromachines, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Hongxuan GuoSchool of Integrated Circuit, Southeast University, Nanjing 210096, China.ORCID 0000-0002-8092-8057
Jiahao YaoSchool of Integrated Circuit, Southeast University, Nanjing 210096, China.
Siyuan ChenSchool of Integrated Circuit, Southeast University, Nanjing 210096, China.
Chong QianInstitute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China.
Xiangyu PanInstitute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China.
Kuibo YinSchool of Integrated Circuit, Southeast University, Nanjing 210096, China.ORCID 0000-0001-5268-6807
Hao ZhuSchool of Microelectronics, Fudan University, Shanghai 200433, China.
Xu GaoInstitute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China.
Suidong WangInstitute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China.ORCID 0000-0002-4761-4793
Litao SunSchool of Integrated Circuit, Southeast University, Nanjing 210096, China.

Funding

National Natural Science Foundation of China 11874105
6 · The paper itself

Abstract

Aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on ITO substrate using the radio-frequency magnetron sputtering technique. Al's and Au's top electrodes were deposited on AlN thin films to make a Au/Al/AlN/ITO sandwich structure memristor. The effects of the Al

Indexed as

aluminum nitride (AlN)aluminum oxide (Al2O3)conductive filaments (CFs)memristorresistive random access memory (RRAM)sputtering

Identifiers

PMID39770252
PMCPMC11679745

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.