Evidence map›Paper›PMID 39770198›Full record

ArticleMicromachines2024

Effect of Ga Doping on the Stability and Optoelectronic Properties of ZnSnO Thin Film Transistor.

Liang Guo, Qing Wang, Chao Wang, Xuefeng Chu, Yunpeng Hao, Yaodan Chi, Xiaotian Yang

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Micromachines, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Liang GuoKey Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China.ORCID 0000-0002-1123-6380
Qing WangKey Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China.
Chao WangKey Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China.
Xuefeng ChuKey Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China.
Yunpeng HaoKey Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China.
Yaodan ChiKey Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China.
Xiaotian YangKey Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China.

Funding

Jilin Science and Technology Development Program YDZJ202301ZYTS489National Natural Science Foundation of China 62374073
6 · The paper itself

Abstract

The electrical, stability and optoelectronic properties of GZTO TFTs with different Ga doping concentrations were investigated. Active layers were prepared by co-sputtering GaO and ZTO targets with different sputtering powers. The experimental results show that the surface of GZTO films is smooth, which is favorable for stability. The off-state current is reduced by a factor of 10, the switching ratio is increased to 1.59 × 10

Indexed as

co-sputteringelectrical propertiesstabilitythin film transistorultraviolet photovoltaics

Identifiers

PMID39770198
PMCPMC11676104

What OpenQuestion holds

Textmetadata
LicenceCC BY
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.