ArticleNature nanotechnology2025
Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization.
Article in Nature nanotechnology, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
6 citing papers in PubMed.
- All-electrical magnetisation switching via tilting spin propagation and polarization in MnTe spin source.Nature communications · 2026Article
- Picosecond switching of magnetic tunnel junctions by spin-orbit torque.Science advances · 2026Article
- Picosecond all-electrical perpendicular magnetization switching.Nature communications · 2026Article
- High-mobility inertial domain walls driven by spin-transfer torque in a ferrimagnetic spinel oxide.Nature communications · 2026Article
- MnAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Metastable body-centered cubic CoMnFe alloy films with perpendicular magnetic anisotropy for spintronics memory.Science and technology of advanced materials · 2024Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
13 authors.
Funding
Abstract
Magnetic random-access memory that uses magnetic tunnel junction memory cells is a high-performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today, its speed is limited by the high magnetization of the memory storage layer. Here we prepare magnetic tunnel junction memory devices with a low magnetization ferrimagnetic Heusler alloy Mn
Identifiers
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.