Evidence map›Paper›PMID 39747014›Full record

ArticleNature communications2025

Compositionally-graded ferroelectric thin films by solution epitaxy produce excellent dielectric stability.

Ruian Zhang, Chen Lin, Hongliang Dong, Haojie Han, Yu Song, Yiran Sun, Yue Wang, Zijun Zhang, Xiaohe Miao, Yongjun Wu and 7 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Ferroelectric-Polarization-Driven Structural Engineering of BiAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Ruian Zhang *State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.ORCID http://orcid.org/0000-0002-3893-8286
Chen Lin *State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
Hongliang Dong *Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China.
Haojie HanState Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
Yu SongSchool of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China.
Yiran SunState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.ORCID http://orcid.org/0009-0001-7879-6681
Yue WangState Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
Zijun ZhangCenter of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
Xiaohe MiaoInstrumentation and Service Center for Physical Sciences, Westlake University, Hangzhou, 310024, China.
Yongjun WuState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
Zhe RenMulti-discipline Research Center, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China.
Qiaoshi ZengCenter for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China. zengqs@hpstar.ac.cn.ORCID http://orcid.org/0000-0001-5960-1378
Houbing HuangSchool of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China.ORCID http://orcid.org/0000-0002-8006-3495
Jing MaState Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.ORCID http://orcid.org/0000-0003-0103-9858
He TianState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China. hetian@zju.edu.cn.ORCID http://orcid.org/0000-0003-2108-3100
Zhaohui RenState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China. renzh@zju.edu.cn.ORCID http://orcid.org/0000-0002-9109-8773
Gaorong HanState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China. hgr@zju.edu.cn.ORCID http://orcid.org/0000-0002-7027-5478

Funding

National Natural Science Foundation of China (National Science Foundation of China) Grant No. 52272129 and No. 12125407Natural Science Foundation of Zhejiang Province (Zhejiang Provincial Natural Science Foundation) Grant No. LR21E020004
6 · The paper itself

Abstract

The composition in ferroelectric oxide films is decisive for optimizing properties and device performances. Controlling a composition distribution in these films by a facile approach is thus highly desired. In this work, we report a solution epitaxy of PbZr

Identifiers

PMID39747014
PMCPMC11696802

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.