ArticleLight, science & applications2025
Near-infrared germanium PIN-photodiodes with >1A/W responsivity.
Article in Light, science & applications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
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Who cites it
6 citing papers in PubMed.
- From Wide- to Low-Bandgap Semiconductors for Transient Photocurrent THz Emission: A Review.Materials (Basel, Switzerland) · 2026Review
- Ultraviolet Photodetectors Based on 4H-SiC With Honeycomb-Like Light-Trapping Structures.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR Imaging.Nanomaterials (Basel, Switzerland) · 2026Article
- A graphene-on-silicon photodetector for low penetrating radiation.Scientific reports · 2026Article
- Transforming Schottky to Ohmic Contacts via Ultrahigh-Vacuum Engineered Interfacial Alloying.ACS applied materials & interfaces · 2025Article
- Numerical Analysis of a SiN Digital Fourier Transform Spectrometer for a Non-Invasive Skin Cancer Biosensor.Sensors (Basel, Switzerland) · 2025Article
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Authors and funding
9 authors.
Funding
Abstract
Even though efficient near-infrared (NIR) detection is critical for numerous applications, state-of-the-art NIR detectors either suffer from limited capability of detecting incoming photons, i.e., have poor spectral responsivity, or are made of expensive group III-V non-CMOS compatible materials. Here we present a nanoengineered PIN-photodiode made of CMOS-compatible germanium (Ge) that achieves a verified external quantum efficiency (EQE) above 90% over a wide wavelength range (1.2-1.6 µm) at zero bias voltage at room temperature. For instance, at 1.55 µm, this corresponds to a responsivity of 1.15 A/W. In addition to the excellent spectral responsivity at NIR, the performance at visible and ultraviolet wavelengths remains high (EQE exceeds even 100% below 300 nm) resulting in an exceptionally wide spectral response range. The high performance is achieved by minimizing optical losses using surface nanostructures and electrical losses using both conformal atomic-layer-deposited aluminum oxide surface passivation and dielectric induced electric field -based carrier collection instead of conventional pn-junction. The dark current density of 76 µA/cm
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.