ArticleScientific reports2024
An innovative semiconducting Ni(II)-metallogel based robust random access memory (RRAM) device for advanced flexible electronics applications.
Article in Scientific reports, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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Who cites it
2 citing papers in PubMed.
- A supramolecular semiconducting nickel(ii)-metallohydrogel with dual antimicrobial and micro-electronic device applications.RSC advances · 2025Article
- Investigating the potent antimicrobial properties of a supramolecular Zn(ii)-metallogel formed from an isophthalic acid-based low molecular weight gelator.RSC advances · 2025Article
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Authors and funding
10 authors.
Funding
Abstract
A highly effective method for creating a supramolecular metallogel of Ni(II) ions (NiA-TA) has been developed in our work. This approach uses benzene-1,3,5-tricarboxylic acid as a low molecular weight gelator (LMWG) in DMF solvent. Rheological studies assessed the mechanical properties of the Ni(II)-metallogel, revealing its angular frequency response and thixotropic behaviour. Field emission scanning electron microscopy (FESEM) showed a complex rocky network structure, while transmission electron microscopy (TEM) identified rod-shaped formations. Energy dispersive X-ray (EDX) mapping confirmed the chemical composition, and Fourier transform infrared spectroscopy (FTIR) alongside X-ray photoelectron spectroscopy (XPS) provided insights into the metallogel's formation mechanism. Schottky diode structures which were fabricated with this Ni(II)-metallogel exhibited notable charge transport properties. Moreover, resistive random access memory (RRAM) devices using NiA-TA demonstrated bipolar resistive switching with an ON/OFF ratio of ~ 110 and durability over 5000 cycles. In this work, logic gate circuits were designed using a 2 × 2 crossbar array. This work highlights the potential of Ni(II)-metallogels for non-volatile memory, neuromorphic computing, flexible electronics, and optoelectronics. Their easy fabrication, reliable switching, and stability make them promising candidates for advanced technologies, offering new opportunities for in-memory computing.
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