ArticleNature communications2024
Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS
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Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 25 papers.
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25 citing papers in PubMed.
- Interfacial Polarization Dynamics of Nitrile Dipoles in Organic Synaptic Transistors for Acoustic Reservoir Computing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Combined rituximab and magnesium acetyl taurate therapy attenuates neurodegeneration via ERK/c-JNK/P38MAPK signaling modulation in methylmercury-induced amyotrophic lateral sclerosis-like neurotoxicity.Naunyn-Schmiedeberg's archives of pharmacology · 2026Article
- Nonenzymatic detection and imaging of m6A-methylated RNA via proximity hybridization-initiated hybridization chain reaction with site-specific recognition.Analytical and bioanalytical chemistry · 2026Article
- Direct Growth of 2D Bilayers on Au(111) for Low-Coercive Sliding Ferroelectricity.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Single-crystal rhombohedral boron nitride wafers for integrated sliding ferroelectric memory.Nature nanotechnology · 2026Article
- Research progress on nanoplatforms for in vivo miRNA detection over the past decade.Mikrochimica acta · 2026Review
- Ferroelectric Transistors: from Materials Innovation to Intelligent Electronic Systems.Advanced materials (Deerfield Beach, Fla.) · 2026Review
- Engineering ScAlN Polar Properties for Advanced Electronic and Synaptic Applications.Small methods · 2026Review
- Neuromorphic Devices and Computing for Sensing, Memory, and Control.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Electrocatalytic Oxyanion Reduction: From Fundamental Principles to Rational Catalyst Design.Topics in current chemistry (Cham) · 2026Review
- Heterologous Systems in the Functional Characterization of Proteins from Phytopathogenic Fungi: A Systematic Review.Molecular biotechnology · 2026Article
- Spontaneous Polarization Suppression of Exciton-Exciton Annihilation in Rhombohedral-Stacked Bilayer Molybdenum Disulfide.ACS nano · 2026Article
- Designable van der Waals Crystal for Artificial Neuronal Cell Mimicking.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Polarization Dynamics in Ferroelectrics: Insights Enabled by Machine Learning Molecular Dynamics.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Stable Analog Weight Programming in Single-Crystalline van der Waals Ferroelectric Transistors for Reliable Computing-in-Memory.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Room-temperature two-dimensional multiferroic metal with voltage-controllable magnetic order.Nature materials · 2026Article
- Ultralow-Barrier Antiferroelectric-Ferroelectric Transition Enabled by Competing Polar Distortion in Two-Dimensional Ruddlesden-Popper Nitride Perovskites.Nano letters · 2026Article
- Giant Tunneling Electroresistance and Anisotropic Photoresponse in Sliding Ferroelectric Homojunctions Based on Bilayer Janus MoSSe.Nanomaterials (Basel, Switzerland) · 2026Article
- Molecular Sieve Promoted Growth of Ferroelectric Trilayer 3R-MoSAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Chronic and non-canonical cGAS-STING activation: implications for health, disease, cancer, and emerging therapeutic opportunities.Apoptosis : an international journal on programmed cell death · 2026Review
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Authors and funding
22 authors.
Xiuzhen Li *Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0009-0001-1799-7762
Biao Qin *State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
Yaxian Wang *Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0000-0003-4790-2880
Yue XiBeijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Tsinghua University, Beijing, China.
Zhiheng HuangBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.
Mengze ZhaoState Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
Yalin PengBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.
Zitao ChenBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0000-0002-6111-7750
Zitian PanBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.
Jundong ZhuBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.
Chenyang CuiBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.
Rong YangCollege of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.
Wei YangBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0000-0002-3925-0352
Sheng MengBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0000-0002-1553-1432
Dongxia ShiBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.
Xuedong BaiBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0000-0002-1403-491X
Can LiuKey Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, China.ORCID http://orcid.org/0000-0001-5451-4144
Na LiBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.
Jianshi TangBeijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Tsinghua University, Beijing, China. jtang@tsinghua.edu.cn.ORCID http://orcid.org/0000-0001-8369-0067
Kaihui LiuState Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China. khliu@pku.edu.cn.ORCID http://orcid.org/0000-0002-8781-2495
Luojun DuBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China. luojun.du@iphy.ac.cn.ORCID http://orcid.org/0000-0002-2420-8258
Guangyu ZhangBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China. gyzhang@iphy.ac.cn.ORCID http://orcid.org/0000-0002-1242-4391
Funding
National Science Foundation of China | National Natural Science Foundation of China-Yunnan Joint Fund (NSFC-Yunnan Joint Fund) 12274447
Abstract
Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding the fundamental properties, functional devices based on sliding ferroelectrics remain elusive. Here, we demonstrate the rewritable, non-volatile memories at room-temperature with a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS
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