ArticleScientific reports2024
Numerical proceeding to calculate impurity states in 2D semiconductor heterostructures.
Article in Scientific reports, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed.
- Donor Intra-Center Absorption to Resonant States in Quantum Wells: Analysis of Peak Shapes.Nanomaterials (Basel, Switzerland) · 2026Article
- Resonant and Non-Resonant Impurity States Related to GaAs/AlGaAs Quantum Well Sub-Bands.Materials (Basel, Switzerland) · 2024Article
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8 authors.
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Abstract
The article provides and discusses details of numerical proceeding for the expansion method to calculate energy positions and wave functions of the localized and resonant electronic states emerging in quantum well-type semiconductor nanostructures because of perturbation of confined states by the Coulomb potential of the hydrogenic impurity center. Effective mass approximation is used. Several excited both resonant and non-resonant states are calculated and classified for the case of a simple rectangular GaAs/AlGaAs quantum well. Results are compared to the ones in literature.
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