Evidence map›Paper›PMID 39721030›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025

Circular-Gate Nanoscale Air Channel Transistors: Achieving ultralow Subthreshold Swing and Working Voltage.

Haiquan Zhao, Feiliang Chen, Yazhou Wei, Lixin Sun, Ruihan Huang, Xiangdong Wang, Fan Yang, Hao Jiang, Yang Liu, Mo Li and 1 more

Abstract read
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In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Article
  2. Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Haiquan ZhaoSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Feiliang ChenSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Yazhou WeiSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Lixin SunSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Ruihan HuangSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Xiangdong WangSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Fan YangSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Hao JiangSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Yang LiuSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Mo LiSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.ORCID https://orcid.org/0000-0001-8413-2497
Jian ZhangSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.

Funding

Fundamental Research Funding Grant JCKY2021110B069Fundamental Research Funds for the Central Universities ZYGX2021J028
6 · The paper itself

Abstract

As electronics advance toward higher performance and adaptability in extreme environments, traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) face challenges due to physical constraints such as Boltzmann's law and short-channel effects. Nanoscale air channel transistors (NACTs) present a promising alternative, leveraging their vacuum-like channel and Fowler-Nordheim tunneling characteristics. In this study, a novel circular gate NACT (CG-NACT) is purposed, fabricated on a 4-inch silicon-based wafer using a CMOS-compatible process. By employing an innovative gate control mechanism, the transistors achieve an ultralow SS of only 0.15 mV dec

Indexed as

high on/off ratiohigh temperature and irradiation resistancenanoscale air channel transistorsultralow subthreshold swingultralow working voltage

Identifiers

PMID39721030
PMCPMC11831514

What OpenQuestion holds

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LicenceCC BY
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.