Synthesis and Characterization of Optically Transparent and Electrically Conductive Mo-Doped ZnO, F-Doped ZnO, and Mo/F-Codoped ZnO Thin Films via Aerosol-Assisted Chemical Vapor Deposition.

Nan Chen, Iqra Ramzan, Shuhui Li, Claire J Carmalt

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Article in Crystal growth & design, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

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2citing papers in PubMed

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1 · What the graph read from it

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3 · Its place in the literature

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2 citing papers in PubMed.

Selected Deposition Techniques and the Effect of Doping on the Properties of Thin ZnO Films: A Literature Review.Materials (Basel, Switzerland) · 2026
Review
Optimized SnOACS applied materials & interfaces · 2026
Article

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5 · Who and what money

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4 authors.

Nan ChenMaterials Chemistry Center, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.

Iqra RamzanMaterials Chemistry Center, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.ORCID https://orcid.org/0009-0003-0451-6207

Shuhui LiMaterials Chemistry Center, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.

Claire J CarmaltMaterials Chemistry Center, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.ORCID https://orcid.org/0000-0003-1788-6971

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Mo-doped ZnO (MZO), F-doped ZnO (FZO), and Mo/F-codoped ZnO (MFZO) films have been deposited using a simple, cheap, and effective thin-film preparation route, aerosol-assisted chemical vapor deposition (AACVD). ZnO was successfully doped with Mo and/or F, confirmed by X-ray photoelectron spectroscopy (XPS) and by a decrease in unit cell parameters from X-ray diffraction (XRD). XRD also confirmed that all of the films had hexagonal wurtzite ZnO structures. Scanning electron microscopy showed that all of the films had well-defined surface features. The undoped ZnO film had a high resistivity of ∼10

Identifiers

PMID39713281

DOI10.1021/acs.cgd.4c01238

PMCPMC11660145

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