ArticleACS nano2025
Reconfiguring van der Waals Metal-Semiconductor Contacts via Selenium Intercalation/Deintercalation Post-Treatment.
Article in ACS nano, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
5 citing papers in PubMed.
- A Novel Approach for the Fabrication of Polarization-Selectivity UV Photosynapse Devices With PdSeAdvanced materials (Deerfield Beach, Fla.) · 2026Article
- Multi-Scale Statistical Correlation between Morphological Anisotropy and Optical Response in Chemically Deposited AZO Nanorods.ACS omega · 2026Article
- Metallic tellurium for p-type contacts of two-dimensional MoTeNature communications · 2026Article
- Spontaneous Room-Temperature Solid-State Reaction at the MoSACS applied nano materials · 2025Article
- Ultrafast Self-Driven WSeAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
9 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
To achieve the commercialization of two-dimensional (2D) semiconductors, the identification of an appropriate combination of 2D semiconductors and three-dimensional (3D) metals is crucial. Furthermore, understanding the van der Waals (vdW) interactions between these materials in thin-film semiconductor processes is essential. Optimizing these interactions requires precise control over the properties of the vdW interface through specific pre- or post-treatment methods. This study utilizes Se-environment annealing as a post-treatment technique, which allows for modification of the vdW gap distance and enhancement of the stability of the interfacial structure through the process of Se intercalation and deintercalation at the 2D-3D interface. The depth of Se intercalation and deintercalation is adjusted by varying the temperature and duration of the postannealing process in an Se environment. This precise control over the process enables the effective metallization of 2D semiconductors. The results indicate that expanding the vdW gap and stabilizing the interface structure through this post-treatment significantly improve the metal contact properties in devices such as field-effect transistors and photovoltaic Schottky diodes by minimizing metal-induced gap states, thus reducing Fermi level pinning. The application of Se intercalation and deintercalation techniques achieves an exceptionally low contact resistance of 773 Ω·μm between p-type WSe
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.