ArticleThe journal of physical chemistry letters2025
Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model.
Article in The journal of physical chemistry letters, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
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Who cites it
7 citing papers in PubMed.
- Voltage-Programmable Switching in Halide Perovskite Memristors by Asymmetric Contact Engineering.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Spiking without Resets: Continuous Integrate-and-Fire Dynamics in Neuronal Circuits.The journal of physical chemistry letters · 2026Article
- Observation of the transition from capacitive to inductive synaptic behavior.National science review · 2026Article
- Self-Oscillatory Neuron-like Devices for Unconventional Computing Applications.Chemical reviews · 2026Review
- Bio-Inspired Spike-Timing-Dependent Plasticity Learning with Metal Halide Perovskites: Toward Artificial Synaptic Functionality.ACS applied materials & interfaces · 2026Article
- Hysteresis in Perovskite Devices: Understanding the Abrupt Resistive Switching Mechanism.ACS energy letters · 2025Article
- Relaxation Time of Multipore Nanofluidic Memristors for Neuromorphic Applications.Journal of the American Chemical Society · 2025Article
Corrections and comments
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Authors and funding
6 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance mechanism containing a state variable that imparts a memory effect. The current-voltage cycling causes transitions of conductance, which are determined by different physical mechanisms, such as the formation of conducting filaments in an insulating surrounding. Here, we provide a unified description of the set and reset processes using a conductance-activated quasi-linear memristor (CALM) model with a unique voltage-dependent relaxation time of the memory variable. We focus on halide perovskite memristors and their intersection with neuroscience-inspired computing. We show that the modeling approach adeptly replicates the experimental traits of both volatile and nonvolatile memristors. Its versatility extends across various device materials and configurations, as W/SiGe/a-Si/Ag, Si/SiO
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Registered trials
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