ArticleACS applied nano materials2024
Broad Range Tuning of InAs Quantum Dot Emission for Nanophotonic Devices in the Telecommunication Bands.
Article in ACS applied nano materials, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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Who cites it
1 citing paper in PubMed.
- Solid-state single-photon sources operating in the telecom wavelength range.Nanophotonics (Berlin, Germany) · 2025Review
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12 authors.
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Abstract
InAs semiconductor quantum dots (QDs) emitting in the near-infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the telecom windows with similar performance remains an open challenge. In particular, nanophotonic devices incorporating quantum light emitting diodes in the telecom C-band based on GaAs substrates are still lacking due to the relaxation of the lattice constant along the InGaAs graded layer which makes the implementation of electrically contacted devices challenging. Here, we report an optimized heterostructure design for QDs emitting in the telecom O- and C-bands grown by means of molecular beam epitaxy. The InAs QDs are embedded in mostly relaxed InGaAs matrices with fixed indium content grown on top of compositionally graded InGaAs buffers. Reciprocal space maps of the indium profiles and optical absorption spectra are used to optimize In
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