ArticleNature2024
Growth-based monolithic 3D integration of single-crystal 2D semiconductors.
Article in Nature, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 26 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
26 citing papers in PubMed.
- Article
- Article
- Article
- Monolithic 3D integration of atomic-layer-deposited oxide semiconductors on 200-mm silicon wafers.Nature nanotechnology · 2026Article
- Gate-level three-dimensional integration of two-dimensional logic cells.Nature communications · 2026Article
- Advances and Challenges in Atomic-Level Growth of Two-Dimensional Single Crystals.Precision chemistry · 2026Review
- Bridging the p-type gap in oxide electronics with 2D semiconductors.Communications engineering · 2026Review
- Silicon-Embedded Multifunctional Heterogeneous Integration for Miniaturized Photoplethysmography Detection Devices.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Article
- Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Gate structuring on n-type bilayer MoSNature materials · 2026Article
- Challenges and prospects of 2D electronics for future monolithic complementary field-effect transistors.Nature communications · 2026Review
- A wafer-scale optoelectronic device unlocks monolithic 3D integration.Nature nanotechnology · 2026Article
- Twelve-inch electrically anisotropic boridene for optoelectronic computing.Nature nanotechnology · 2026Article
- Large-scale gate-all-around MoSNational science review · 2026Article
- Wafer-scale formation of MoSScientific reports · 2026Article
- Revisiting Dynamical Theory To Elucidate Friedel's Law Breaking in Low-Energy Electron Diffraction as Strong Evidence of Unidirectional Growth of Monolayer 2H MoSNano letters · 2026Article
- Flexible monolithic 3D complementary circuits based on 2D semiconductor inks.Nature communications · 2025Article
- Investigation into Laser-Vibration-Assisted Cutting of Single-Crystal Silicon by Molecular Dynamics Simulation.Micromachines · 2025Article
- High-κ dielectric van der Waals integration on 2D semiconductors for three-dimensional complementary logic systems.Nature communications · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
21 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
The demand for the three-dimensional (3D) integration of electronic components is steadily increasing. Despite substantial processing challenges, the through-silicon-via (TSV) technique emerges as the only viable method for integrating single-crystalline device components in a 3D format
Identifiers
39695208What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.