Reducing Avalanche Build-Up Time by Integrating a Single-Photon Avalanche Diode with a BiCMOS Gating Circuit.

Bernhard Goll, Mehran Saadi Nejad, Kerstin Schneider-Hornstein, Horst Zimmermann

Abstract read

In one paragraph

Article in Sensors (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Bernhard GollInstitute of Electrodynamics, Microwave and Circuit Engineering, TU Wien, Gusshausstrasse 25/E354-02, A-1040 Wien, Austria.

Mehran Saadi NejadInstitute of Electrodynamics, Microwave and Circuit Engineering, TU Wien, Gusshausstrasse 25/E354-02, A-1040 Wien, Austria.

Kerstin Schneider-HornsteinInstitute of Electrodynamics, Microwave and Circuit Engineering, TU Wien, Gusshausstrasse 25/E354-02, A-1040 Wien, Austria.ORCID 0000-0002-7669-2192

Horst ZimmermannInstitute of Electrodynamics, Microwave and Circuit Engineering, TU Wien, Gusshausstrasse 25/E354-02, A-1040 Wien, Austria.ORCID 0000-0003-3221-0769

Funding

FWF Austrian Science Fund P32393-N30

6 · The paper itself

Abstract

It is shown that the integration of a single-photon avalanche diode (SPAD) together with a BiCMOS gating circuit on one chip reduces the parasitic capacitance a lot and therefore reduces the avalanche build-up time. The capacitance of two bondpads, which are necessary for the connection of an SPAD chip and a gating chip, are eliminated by the integration. The gating voltage transients of the SPAD are measured using an integrated mini-pad and a picoprobe. Furthermore, the gating voltage transients of a CMOS gating circuit and of the BiCMOS gating circuit are compared for the same integrated SPAD. The extension of the 0.35 μm CMOS process by an NPN transistor process module enabled the BiCMOS gating circuit. The avalanche build-up time of the SPAD is reduced to 1.6 ns due to the integration compared to about 3 ns for a wire-bonded off-chip SPAD using the same n+ and p-well as well as the same 0.35 μm technology.

Indexed as

avalanche transientsBiCMOSCMOSgating circuitsingle-photon avalanche diodeSPAD

Identifiers

PMID39686135

DOI10.3390/s24237598

PMCPMC11644643

What OpenQuestion holds

Textmetadata

LicenceCC BY

Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.