ArticleMaterials (Basel, Switzerland)2024
Effects of High-Temperature Treatments in Inert Atmosphere on 4H-SiC Substrates and Epitaxial Layers.
Article in Materials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
0 citing papers in PubMed.
No citing paper in PubMed yet.
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
8 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Silicon carbide is a wide-bandgap semiconductor useful in a new class of power devices in the emerging area of high-temperature and high-voltage electronics. The diffusion of SiC devices is strictly related to the growth of high-quality substrates and epitaxial layers involving high-temperature treatment processing. In this work, we studied the thermal stability of substrates of 4H-SiC in an inert atmosphere in the range 1600-2000 °C. Micro-Raman spectroscopy characterization revealed that the thermal treatments induced inhomogeneity in the wafer surface related to a graphitization process starting from 1650 °C. It was also found that the graphitization influences the epitaxial layer successively grown on the wafer substrate, and in particular, by time-resolved photoluminescence spectroscopy it was found that graphitization-induced defectiveness is responsible for the reduction of the carrier recombination lifetime.
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.