Evidence map›Paper›PMID 39683253›Full record

ArticleNanomaterials (Basel, Switzerland)2024

TCAD Simulation of Resistive Switching Devices: Impact of ReRAM Configuration on Neuromorphic Computing.

Seonggyeom Kim, Jonghwan Lee

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

2 authors.

Seonggyeom KimDepartment of System Semiconductor Engineering, Sangmyung University, Cheonan 31066, Republic of Korea.
Jonghwan LeeDepartment of System Semiconductor Engineering, Sangmyung University, Cheonan 31066, Republic of Korea.ORCID 0000-0002-9962-6999

Funding

Sangmyung University a 2024 research Grant
6 · The paper itself

Abstract

This paper presents a method for modeling ReRAM in TCAD and validating its accuracy for neuromorphic systems. The data obtained from TCAD are used to analyze the accuracy of the neuromorphic system. The switching behaviors of ReRAM are implemented using the kinetic Monte Carlo (KMC) approach. Realistic ReRAM characteristics are obtained through the use of the trap-assisted tunneling (TAT) model and thermal equations. HfO

Indexed as

KMC (kinetic Monte Carlo)memristorneuromorphic computingReRAM (resistive random-access memory)TCAD (technology computer-aided design)

Identifiers

PMID39683253
PMCPMC11643058

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.