Evidence map›Paper›PMID 39664294›Full record

ArticleResearch (Washington, D.C.)2024

Ga

Xiaoxi Li, Zhifan Wu, Yuan Fang, Shuqi Huang, Cizhe Fang, Yibo Wang, Xiangyu Zeng, Yingguo Yang, Yue Hao, Yan Liu and 1 more

Abstract read
In one paragraph

Article in Research (Washington, D.C.), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Back-Gated WSACS applied materials & interfaces · 2025
    Article
  2. Native GaN/GaOResearch (Washington, D.C.) · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Xiaoxi LiHangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.
Zhifan WuHangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.
Yuan FangHangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.
Shuqi HuangHangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.
Cizhe FangHangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.
Yibo WangHangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.
Xiangyu ZengHangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.
Yingguo YangState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.ORCID https://orcid.org/0009-0004-6645-0861
Yue HaoHangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.
Yan LiuHangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.
Genquan HanHangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The wide-bandgap semiconductor material Ga

Identifiers

PMID39664294
PMCPMC11632154

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.