ReviewMRS communications2024
Progress of emerging non-volatile memory technologies in industry.
Review in MRS communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
6 citing papers in PubMed.
- High-precision hyperdimensional computing enabled by in-memory computing using high-polarization ferroelectric HfMicrosystems & nanoengineering · 2026Article
- A reconfigurable hardware infrastructure for evaluating PUFs in non-volatile memories.HardwareX · 2026Article
- Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBaACS applied materials & interfaces · 2026Article
- Ultrafast multi-level control of sub-50 nm skyrmions in a Pd-intercalated van der Waals magnet.Nature communications · 2026Article
- First-principles investigation of transition-metal doped AlRSC advances · 2026Article
- BiACS nano · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
3 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
This prospective and performance summary provides a view on the state of the art of emerging non-volatile memory (eNVM) in the semiconductor industry. The overarching aim is to inform academic researchers of the status of these technologies in industry, so as to help direct the right academic research questions for future materials and device development. eNVM already have a strong foothold in the semiconductor industry with the main target of replacing embedded flash memory, and soon possibly DRAM and SRAM, i.e. replacing conventional memory. Magnetic and resistive memory are the current frontrunners among eNVM for embedded flash replacement and they are very advanced in this, which poses high demands on future academic research for eNVM for this purpose. Phase-change and ferroelectric memory are less available as commercially available products. The use of eNVM for new forms of artificial intelligence hardware is a much more open field for future academic research. Graphical abstract:
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.