ArticleNanophotonics (Berlin, Germany)2024
Scalable hot carrier-assisted silicon photodetector array based on ultrathin gold film.
Article in Nanophotonics (Berlin, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed.
- A Universal Approach to Enhancing Silicon Hot-Carrier Photodetectors for CMOS-Compatible SWIR Imaging.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Enabling highly efficient infrared silicon photodetectors via disordered metasurfaces with upconversion nanoparticles.Science advances · 2025Article
- Enabling new frontiers of nanophotonics with metamaterials, photonic crystals, and plasmonics.Nanophotonics (Berlin, Germany) · 2024Article
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Authors and funding
7 authors.
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Abstract
Silicon (Si) offers cost-effective production and convenient on-chip integration for photodetection due to its well-established CMOS technology. However, the indirect bandgap of Si inherently limits its detection efficiency in the near-infrared (NIR) regime. Here, we propose a strategy to achieve high NIR photoresponse in Si by introducing a strong light-absorbing ultrathin gold (Au) film to generate hot carriers. Using a 4.6 nm thick-Au film deposited on Si, we achieved photoresponsivity of 1.6 mA/W at 1310 nm under zero-bias conditions, and rapid temporal responses of 7.5 and 8 μs for rise and fall times, respectively, comparable to germanium (Ge) photodiodes. By utilizing an ultrathin (<6 nm) Au film as the light-detecting layer and thicker (>100 nm) Au film as electrodes, we introduce a unique approach to design a photodiode array based on a single metal (Au) platform. Comparative analysis with a commercial beam profiler image validates the performance of our designed array. This work presents an efficient strategy for manufacturing cost-effective and scalable NIR photodetector arrays, which eliminates the need for additional insulator layers.
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