ArticleNanophotonics (Berlin, Germany)2022
Enhanced terahertz detection of multigate graphene nanostructures.
Article in Nanophotonics (Berlin, Germany), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
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8 citing papers in PubMed.
- Resonant Dyakonov-Shur Magnetoplasmons in Graphene Terahertz Photodetectors.Nanophotonics (Berlin, Germany) · 2026Article
- Unveiling the Miniband Structure of Graphene Moiré Superlattices via Gate-Dependent Terahertz Photocurrent Spectroscopy.ACS nano · 2025Article
- Real-Time 0.89 THz Terahertz Imaging with High-Electron-Mobility Transistor Detector and Hydrogen Cyanide Laser for Non-Destructive Nut Detection.Micromachines · 2025Article
- Electrical spectroscopy of polaritonic nanoresonators.Nature communications · 2024Article
- Impact of device resistances in the performance of graphene-based terahertz photodetectors.Frontiers of optoelectronics · 2024Article
- Terahertz Detection by Asymmetric Dual Grating Gate Bilayer Graphene FETs with Integrated Bowtie Antenna.Nanomaterials (Basel, Switzerland) · 2024Article
- Coherent Terahertz Detection via Ultrafast Dynamics of Hot Dirac Fermions in Graphene.ACS nano · 2024Article
- Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-Layer Graphene Transistors.Nano letters · 2024Article
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13 authors.
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Abstract
Terahertz (THz) waves have revealed a great potential for use in various fields and for a wide range of challenging applications. High-performance detectors are, however, vital for exploitation of THz technology. Graphene plasmonic THz detectors have proven to be promising optoelectronic devices, but improving their performance is still necessary. In this work, an asymmetric-dual-grating-gate graphene-terahertz-field-effect-transistor with a graphite back-gate was fabricated and characterized under illumination of 0.3 THz radiation in the temperature range from 4.5 K up to the room temperature. The device was fabricated as a sub-THz detector using a heterostructure of h-BN/Graphene/h-BN/Graphite to make a transistor with a double asymmetric-grating-top-gate and a continuous graphite back-gate. By biasing the metallic top-gates and the graphite back-gate, abrupt
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