ArticleNature communications2024
Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors.
Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
3 citing papers in PubMed.
- From Wide- to Low-Bandgap Semiconductors for Transient Photocurrent THz Emission: A Review.Materials (Basel, Switzerland) · 2026Review
- Adaptive Epitaxy of C-Si-Ge-Sn: Customizable Bulk and Quantum Structures.Advanced materials (Deerfield Beach, Fla.) · 2025Article
- Epitaxial SiGeSn Alloys for CMOS-Compatible Thermoelectric Devices.ACS applied energy materials · 2025Article
Corrections and comments
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Authors and funding
17 authors.
Funding
Abstract
Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 µm with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform.
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Registered trials
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