ArticleRSC advances2024
First-principles prediction of the electronic properties and contact features of graphene/γ-GeSe van der Waals heterostructure: effects of electric fields and strains.
Article in RSC advances, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
In this work, we investigate systematically the electronic properties and tunable contact behavior of the graphene/γ-GeSe heterostructure under applied electric fields and out-of-plane strains using first-principles calculations. At equilibrium, the heterostructure forms a p-type Schottky contact with low Schottky barrier, making it suitable for low-resistance electronic devices. The application of electric fields modulates the Schottky barriers, enabling transitions between p-type and n-type contacts and even Schottky to Ohmic contact. Similarly, strain engineering by adjusting the interlayer spacing effectively alters the contact types, with compressive strain reducing the Schottky barrier to zero, and tensile strain inducing a shift from p-type to n-type Schottky contact. Our findings provide a pathway for optimizing graphene/γ-GeSe heterostructures for multifunctional applications, emphasizing tunable electronic properties to enhance device performance.
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