ReviewMicromachines2024
A Review of Ku-Band GaN HEMT Power Amplifiers Development.
Review in Micromachines, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
4 citing papers in PubMed.
- Damage Mechanism of GaN HEMT and Failure Analysis of Power Amplifier Under High-Altitude Electromagnetic Pulse.Micromachines · 2026Article
- New Advances in Wide-Bandgap RF and Power Electronic Devices: From Material Innovation to System Integration.Micromachines · 2026Article
- A Ku-Band 13 W GaN HEMT Power Amplifier MMIC with a Coupled-Line Interstage Stabilization Technique for Radar Sensor Systems.Sensors (Basel, Switzerland) · 2026Article
- Design of a High-Power, High-Efficiency GaN Power Amplifier for W-Band Applications.Micromachines · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
1 author.
Funding
Abstract
This review article investigates the current status and advances in Ku-band gallium nitride (GaN) high-electron mobility transistor (HEMT) high-power amplifiers (HPAs), which are critical for satellite communications, unmanned aerial vehicle (UAV) systems, and military radar applications. The demand for high-frequency, high-power amplifiers is growing, driven by the global expansion of high-speed data communication and enhanced national security requirements. First, we compare the main GaN HEMT process technologies employed in Ku-band HPA development, categorizing the HPAs into monolithic microwave integrated circuits (MMICs) and internally matched power amplifier modules (IM-PAMs) and examining their respective characteristics. Then, by reviewing the literature, we explore design topologies, major issues like oscillation prevention and bias circuits, and heat sink technologies for thermal management. Our findings indicate that silicon carbide (SiC) substrates with gate lengths of 0.25 μm and 0.15 μm are predominantly used, with ongoing developments enabling MMICs and IM-PAMs to achieve up to 100 W output power and 30% power-added efficiency. Notably, the performance of MMIC power amplifiers is advancing more rapidly than that of IM-PAMs, highlighting MMICs as a promising direction for achieving higher efficiency and integration in future Ku-band applications. This paper can provide insights into the overall key technologies for Ku-band GaN HPA design and future development directions.
Indexed as
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What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.