ArticleAdvanced materials (Deerfield Beach, Fla.)2025
Quantification of Interfacial Charges in Multilayered Nanocapacitors by Operando Electron Holography.
Article in Advanced materials (Deerfield Beach, Fla.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
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Who cites it
2 citing papers in PubMed.
- Mapping electric fields and observation of ferroelectric domain switching in hafnia-zirconia devices by electron holography.Nature communications · 2025Article
- Quantification of Interfacial Charges in Multilayered Nanocapacitors by Operando Electron Holography.Advanced materials (Deerfield Beach, Fla.) · 2025Article
Corrections and comments
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Authors and funding
7 authors.
Funding
Abstract
Interfaces in heterostructures play a major role in the functionality of electronic devices. Phenomena such as charge trapping/detrapping at interfaces under electric field affect the dynamics of metal/oxide/metal capacitors and metal/oxide/semiconductor transistors used for memory and logic applications. Charge traps are also key for the stabilization of a ferroelectric polarization and its ability to switch in ferroelectric devices such as ferroelectric tunnel junctions (FTJs). However, electric-field induced charging phenomena remain unclear even in conventional dielectric heterostructures due to a lack of direct measurement methods. Here, it is shown how operando off-axis electron holography can be used to quantify the charges trapped at the dielectric/dielectric interfaces as well as metal/dielectric interfaces in HfO
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