ArticleRSC advances2024
Rapid activation of a solution-processed aluminum oxide gate dielectric through intense pulsed light irradiation.
Article in RSC advances, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
3 citing papers in PubMed.
- Low-Leakage and Low-Voltage Rare-Metal-Free TFTs Using Solution Combustion-Synthesized AlACS omega · 2026Article
- Light-Absorbing-Layer-Free Flash Lamp Annealing for High-Throughput Fabrication of All-Solution-Processed Oxide Electronics.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- A Review of Photonic Sintering of Non-Oxide Ceramics for Printed Electronics.Materials (Basel, Switzerland) · 2025Review
Corrections and comments
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Authors and funding
7 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
In this study, we report rapid activation of a solution-processed aluminum oxide gate dielectric film to reduce its processing time under ambient atmosphere. Aluminum precursor films were exposed to a high energy light-pulse and completely converted into dielectric films within 30 seconds (450 pulses). The aluminum oxide gate dielectric film irradiated using intense pulsed light with 450 pulses exhibits a smooth surface and a leakage current density of less than 10
Identifiers
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Registered trials
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