Evidence map›Paper›PMID 39578422›Full record

ArticleNature communications2024

Robust single modified divacancy color centers in 4H-SiC under resonant excitation.

Zhen-Xuan He, Ji-Yang Zhou, Qiang Li, Wu-Xi Lin, Rui-Jian Liang, Jun-Feng Wang, Xiao-Lei Wen, Zhi-He Hao, Wei Liu, Shuo Ren and 8 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

18 authors.

Zhen-Xuan He *CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, China.
Ji-Yang Zhou *CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, China.
Qiang LiInstitute of Advanced Semiconductors and Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang, China.
Wu-Xi LinCAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, China.ORCID http://orcid.org/0000-0002-6048-2270
Rui-Jian LiangCAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, China.
Jun-Feng WangCollege of Physics, Sichuan University, Chengdu, Sichuan, China.ORCID http://orcid.org/0000-0002-5720-056X
Xiao-Lei WenCenter for Micro and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, Anhui, China.
Zhi-He HaoCAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, China.
Wei LiuCAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, China.
Shuo RenCAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, China.
Hao LiState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.ORCID http://orcid.org/0000-0001-6946-4362
Li-Xing YouState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.ORCID http://orcid.org/0000-0001-7304-0474
Rui-Jun ZhangDepartment of Physics, Xiamen University, Xiamen, Fujian, China.
Feng ZhangDepartment of Physics, Xiamen University, Xiamen, Fujian, China.ORCID http://orcid.org/0000-0002-1163-2498
Jian-Shun TangCAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, China.ORCID http://orcid.org/0000-0002-2191-8350
Jin-Shi XuCAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, China. jsxu@ustc.edu.cn.ORCID http://orcid.org/0000-0003-0528-1000
Chuan-Feng LiCAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, China. cfli@ustc.edu.cn.ORCID http://orcid.org/0000-0001-6815-8929
Guang-Can GuoCAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, China.

Funding

National Natural Science Foundation of China (National Science Foundation of China) No. 92365205, No. U19A2075, No. 11774335, and No. 11821404
6 · The paper itself

Abstract

Color centers in silicon carbide (SiC) offer exciting possibilities for quantum information processing. However, the challenge of ionization during optical manipulation leads to charge variations, hampering the efficacy of spin-photon interfaces. Recent research predicted that modified divacancy color centers can stabilize their charge states, resisting photoionization. This study presents a method for precisely creating single divacancy arrays in 4H-SiC using a focused helium ion beam. Photoluminescence tests reveal consistent emission with minimal linewidth fluctuations (∼50 MHz over 3 h). By measuring the ionization rate for different polytypes of divacancies, we found that the modified divacancies are more robust against resonant excitation. Furthermore, angle-resolved photoluminescence excitation spectra unveil two resonant-transition lines with orthogonal polarizations. Enhanced optical and spin characteristics were notably observed in these color centers compared to those generated through carbon-ion and shallow implantation methods, positioning modified divacancies as promising contenders for advancing quantum networking.

Identifiers

PMID39578422
PMCPMC11584878

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.