Evidence map›Paper›PMID 39564745›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2025

Printed High-Entropy Prussian Blue Analogs for Advanced Non-Volatile Memristive Devices.

Yueyue He, Yin-Ying Ting, Hongrong Hu, Thomas Diemant, Yuting Dai, Jing Lin, Simon Schweidler, Gabriel Cadilha Marques, Horst Hahn, Yanjiao Ma and 4 more

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In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Article
  2. Review
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Yueyue HeInstitute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Kaiserstr. 12, 76131, Karlsruhe, Germany.
Yin-Ying TingInstitute of Energy Technologies (IET-3), Forschungszentrum Jülich GmbH, Wilhelm-Johnen-Str., 52428, Jülich, Germany.
Hongrong HuInstitute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Kaiserstr. 12, 76131, Karlsruhe, Germany.
Thomas DiemantHelmholtz Institute Ulm (HIU) for Electrochemical Energy Storage, Helmholtzstr. 11, 89081, Ulm, Germany.
Yuting DaiInstitute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Kaiserstr. 12, 76131, Karlsruhe, Germany.
Jing LinInstitute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Kaiserstr. 12, 76131, Karlsruhe, Germany.
Simon SchweidlerInstitute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Kaiserstr. 12, 76131, Karlsruhe, Germany.ORCID https://orcid.org/0000-0003-4675-1072
Gabriel Cadilha MarquesInstitute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Kaiserstr. 12, 76131, Karlsruhe, Germany.
Horst HahnInstitute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Kaiserstr. 12, 76131, Karlsruhe, Germany.
Yanjiao MaSchool of Energy and Mechanical Engineering, Jiangsu Key Laboratory of New Power Batteries, Nanjing Normal University, Nanjing, 210023, China.
Torsten BrezesinskiInstitute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Kaiserstr. 12, 76131, Karlsruhe, Germany.
Piotr M KowalskiInstitute of Energy Technologies (IET-3), Forschungszentrum Jülich GmbH, Wilhelm-Johnen-Str., 52428, Jülich, Germany.
Ben BreitungInstitute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Kaiserstr. 12, 76131, Karlsruhe, Germany.ORCID https://orcid.org/0000-0002-1304-3398
Jasmin Aghassi-HagmannInstitute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Kaiserstr. 12, 76131, Karlsruhe, Germany.

Funding

Carl Zeiss Foundation; Helmholtz program "Materials Systems Engineering" (MSE); KIT via the project Auto.MAPDFGfinancial support from the China Scholarship CouncilResearch Alliance-Center for Simulation and Data Science
6 · The paper itself

Abstract

Non-volatile memristors dynamically switch between high (HRS) and low resistance states (LRS) in response to electrical stimuli, essential for electronic memories, neuromorphic computing, and artificial intelligence. High-entropy Prussian blue analogs (HE-PBAs) are promising insertion-type battery materials due to their diverse composition, high structural integrity, and favorable ionic conductivity. This work proposes a non-volatile, bipolar memristor based on HE-PBA. The device, featuring an active layer of HE-PBA sandwiched between Ag and ITO electrodes, is fabricated by inkjet printing and microplotting. The conduction mechanism of the Ag/HE-PBA/ITO device is systematically investigated. The results indicate that the transition between HRS and LRS is driven by an insulating-metallic transition, triggered by extraction/insertion of highly mobile Na

Indexed as

high‐entropy PBAmemristorsnon‐volatile memoryresistive switching mechanism

Identifiers

PMID39564745
PMCPMC11854872

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