ArticleMRS energy & sustainability : a review journal2024
Ferroelectric field effect transistors based on two-dimensional CuInP
Article in MRS energy & sustainability : a review journal, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
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Who cites it
2 citing papers in PubMed.
- Van Der Waals Ferroionic CuInPMaterials (Basel, Switzerland) · 2026Review
- Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistors.Nature communications · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
8 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Abstract: Heterostructures of two-dimensional (2D) materials comprise clean van der Waals (vdW) interfaces that can facilitate charge or energy transfer. Recently, the 2D ferroelectric CuInP Graphical abstract: Highlights: This research studies the temperature-dependent local doping across a vdW ferroelectric/2D channel interface that affects the transport properties of ferroelectric field effect transistors (FeFETs).Experimental findings showed ferroelectric polarization switching-based hysteresis in CuInP Discussion: vdW ferroelectrics that can be scaled to atomic layer thicknesses are useful for miniaturised low energy electronics.Understanding the interface charge or energy transfer in vdW ferroelectrics is essential for their integration into current or future technologies. Supplementary Information: The online version contains supplementary material available at 10.1557/s43581-024-00109-y.
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Registered trials
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