ArticleLight, science & applications2024
Highly-efficient (>70%) and Wide-spectral (400-1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors.
Article in Light, science & applications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
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Who cites it
7 citing papers in PubMed.
- Numerical simulation of thickness-dependent carrier collection efficiency in SnSe absorber layers.Scientific reports · 2026Article
- 45 km ROTDR with 0.5 m/0.11 °C via complex-domain square-wave width-chirp pulse compression.Light, science & applications · 2026Article
- Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR Imaging.Nanomaterials (Basel, Switzerland) · 2026Article
- Broadband and high-resolution snapshot spectroscopy with high-index transition metal dichalcogenides.Nature communications · 2026Article
- Advances in NIR-II Fluorescence Laparoscopy for Precision Diagnosis and Theranostics of Urological Oncology.International journal of nanomedicine · 2026Review
- Enhanced SWIR photodetection in TeScientific reports · 2025Article
- A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials.Micromachines · 2025Article
Corrections and comments
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Authors and funding
11 authors.
Funding
Abstract
This paper demonstrates the novel approach of sub-micron-thick InGaAs broadband photodetectors (PDs) designed for high-resolution imaging from the visible to short-wavelength infrared (SWIR) spectrum. Conventional approaches encounter challenges such as low resolution and crosstalk issues caused by a thick absorption layer (AL). Therefore, we propose a guided-mode resonance (GMR) structure to enhance the quantum efficiency (QE) of the InGaAs PDs in the SWIR region with only sub-micron-thick AL. The TiO
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Registered trials
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