Evidence map›Paper›PMID 39537743›Full record

ArticleScientific reports2024

Proton irradiation Of Ga

Alexander Y Polyakov, Danila S Saranin, Ivan V Shchemerov, Anton A Vasilev, Andrei A Romanov, Anastasiia I Kochkova, Pavel Gostischev, Alexey V Chernykh, Luiza A Alexanyan, Nikolay R Matros and 7 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Scientific reports, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Alexander Y PolyakovDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Leninsky Pr. 4, Moscow, 119049, Russia.
Danila S SaraninDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Leninsky Pr. 4, Moscow, 119049, Russia.
Ivan V ShchemerovDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Leninsky Pr. 4, Moscow, 119049, Russia.
Anton A VasilevDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Leninsky Pr. 4, Moscow, 119049, Russia.
Andrei A RomanovDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Leninsky Pr. 4, Moscow, 119049, Russia.
Anastasiia I KochkovaDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Leninsky Pr. 4, Moscow, 119049, Russia.
Pavel GostischevDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Leninsky Pr. 4, Moscow, 119049, Russia.
Alexey V ChernykhDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Leninsky Pr. 4, Moscow, 119049, Russia.
Luiza A AlexanyanDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Leninsky Pr. 4, Moscow, 119049, Russia.
Nikolay R MatrosDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Leninsky Pr. 4, Moscow, 119049, Russia.
Petr B LagovDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Leninsky Pr. 4, Moscow, 119049, Russia.
Aleksandr S DoroshkevichJoint Institute for Nuclear Research, Joliot-Curie 6, Dubna, Moscow Region, 141980, Russia.
Rafael Sh IsayevJoint Institute for Nuclear Research, Joliot-Curie 6, Dubna, Moscow Region, 141980, Russia.
Yu S PavlovLaboratory of Radiation Technologies, A. N. Frumkin Institute of Physical Chemistry and Electrochemistry Russian Academy of Sciences (IPCE RAS), Moscow, 119071, Russia.
Alexander M KislyukDepartment of Materials Science of Semiconductors, National University of Science and Technology MISIS, Leninsky Pr. 4, Moscow, 119049, Russia.
Eugene B YakimovDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Leninsky Pr. 4, Moscow, 119049, Russia.
Stephen J PeartonDepartment of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA. spear@mse.ufl.edu.ORCID http://orcid.org/0000-0001-6498-1256

Funding

United States Department of Defense | Defense Threat Reduction Agency (DTRA) HDTRA1-20-2-0002
6 · The paper itself

Abstract

p-NiO/n-Ga

Identifiers

PMID39537743
PMCPMC11560958

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.