Evidence map›Paper›PMID 39527704›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025

Achieving Ultra-High Heat Flux Transfer in Graphene Films via Tunable Gas Escape Channels.

Haolong Zheng, Peng He, Shujing Yang, Yonghua Lu, Na Guo, Yanhong Li, Gang Wang, Guqiao Ding

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Review
  2. Achieving Ultra-High Heat Flux Transfer in Graphene Films via Tunable Gas Escape Channels.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Haolong ZhengState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.ORCID https://orcid.org/0009-0006-5770-5783
Peng HeState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.ORCID https://orcid.org/0000-0003-0606-8762
Shujing YangState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
Yonghua LuState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
Na GuoState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
Yanhong LiState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
Gang WangState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.ORCID https://orcid.org/0000-0002-2288-3807
Guqiao DingState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.ORCID https://orcid.org/0000-0003-1674-3477

Funding

National Natural Science Foundation of China 11774368National Natural Science Foundation of China 51802337National Natural Science Foundation of China 62174093
6 · The paper itself

Abstract

Graphene films have been applied in the thermal management of electronic devices due to their high thermal conductivity. However, the ever-increasing power and local heat flux density of electronic chips require graphene films with excellent heat flux carrying capacity. Enhancing the heat flux carrying capacity is highly challenging, and the key is to maintain high thermal conductivity while increasing film thickness. Gases released during film assembly and the resulting catastrophic structural destruction should be responsible for the trade-off between film thickness and thermal conductivity. Herein, the evolution of the pore structure is investigated during the assembly of graphene films and propose the construction of gas escape channels for the preparation of thick graphene films. The process involves using humidification treatment and freeze-drying GO films to pre-construct the ordered flat pore structure. The microstructure optimization of graphene films with more order, fewer wrinkles and defects, and larger grain size is achieved. After optimization, graphene films with ultra-high thermal conductivity (1781 W m

Indexed as

gas escape channelsgraphene filmsheat dissipationhighly thermally conductivestructural regulation

Identifiers

PMID39527704
PMCPMC11714209

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.