ReviewMaterials (Basel, Switzerland)2024
Device Applications Enabled by Bandgap Engineering Through Quantum Dot Tuning: A Review.
Review in Materials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
1 citing paper in PubMed.
- Anion-engineered CsInTiS₄₋ₓOₓ (x = 0.8) quantum dots for enhanced nonlinear photonics and optoelectronics.Scientific reports · 2026Article
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Authors and funding
3 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Quantum dots (QDs) are becoming essential materials for future scientific and real-world applications, owing to their interesting and distinct optical and electrical properties compared to their bulk-state counterparts. The ability to tune the bandgap of QDs based on size and composition-a key characteristic-opens up new possibilities for enhancing the performance of various optoelectronic devices. These advances could extend to cutting-edge applications such as ultrawide-band or dual-band photodetectors (PDs), optoelectronic logic gates, neuromorphic devices, and security functions. This paper revisits the recent progress in QD-embedded optoelectronic applications, focusing on bandgap tunability. The current limitations and challenges in advancing and realizing QD-based optoelectronic devices are also discussed.
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Registered trials
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