Evidence map›Paper›PMID 39517429›Full record

ArticleMaterials (Basel, Switzerland)2024

Effect of Deposition Temperature on Zn Interstitials and Oxygen Vacancies in RF-Sputtered ZnO Thin Films and Thin Film-Transistors.

Sasikala Muthusamy, Sudhakar Bharatan, Sinthamani Sivaprakasam, Ranjithkumar Mohanam

Abstract read
In one paragraph

Article in Materials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Review
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Sasikala MuthusamyDepartment of Electrical and Electronics Engineering, Sri Venkateswara College of Engineering, Sriperumbudur 602117, India.
Sudhakar BharatanDepartment of Electrical and Electronics Engineering, Sri Venkateswara College of Engineering, Sriperumbudur 602117, India.
Sinthamani SivaprakasamDepartment of Electrical and Electronics Engineering, Sri Venkateswara College of Engineering, Sriperumbudur 602117, India.ORCID 0000-0002-8882-9766
Ranjithkumar MohanamDepartment of Electrical and Electronics Engineering, Sri Venkateswara College of Engineering, Sriperumbudur 602117, India.ORCID 0000-0003-1435-585X

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

ZnO thin films were deposited using RF sputtering by varying the argon:oxygen gas flow rates and substrate temperatures. Structural, optical and electrical characterization of ZnO thin films were systematically carried out using X-Ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy, X-Ray photoelectron spectroscopy (XPS) and Hall measurements. Film deposited at room temperature and annealed at 300 °C exhibited low O

Indexed as

RF sputteringthin-film transistorX-Ray diffractionX-Ray photoelectron spectroscopyZnO

Identifiers

PMID39517429
PMCPMC11547206

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.