Evidence map›Paper›PMID 39516220›Full record

ArticleNature communications2024

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization.

Guangdi Feng, Yifei Liu, Qiuxiang Zhu, Zhenyu Feng, Shengwen Luo, Cuijie Qin, Luqiu Chen, Yu Xu, Haonan Wang, Muhammad Zubair and 7 more

Abstract read
In one paragraph

Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.

0numbers the graph read from it
0cells of the map it votes in
8citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

8 citing papers in PubMed.

  1. Article
  2. Article
  3. Review
  4. Ferroelectric Properties of Bilayer MoSAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
    Article
  5. Review
  6. Review
  7. Deformation-Tailored MoSNanomaterials (Basel, Switzerland) · 2025
    Article
  8. In-memory ferroelectric differentiator.Nature communications · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Guangdi Feng *Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Yifei Liu *Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Qiuxiang Zhu *Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China. qxzhu@clpm.ecnu.edu.cn.ORCID http://orcid.org/0000-0002-3515-315X
Zhenyu FengKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Shengwen LuoKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Cuijie QinKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Luqiu ChenKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Yu XuKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Haonan WangKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Muhammad ZubairKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Ke QuKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Chang YangKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.ORCID http://orcid.org/0000-0002-1380-9533
Shenglan HaoKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Fangyu YueKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.ORCID http://orcid.org/0000-0002-3153-6022
Chungang DuanKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Junhao ChuKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Bobo TianKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China. bbtian@ee.ecnu.edu.cn.ORCID http://orcid.org/0000-0002-4251-2755

Funding

National Natural Science Foundation of China (National Science Foundation of China) T2222025, 62474065, 62174053 and 12134003
6 · The paper itself

Abstract

The burgeoning interest in two-dimensional semiconductors stems from their potential as ultrathin platforms for next-generation transistors. Nonetheless, there persist formidable challenges in fully obtaining high-performance complementary logic components and the underlying mechanisms for the polarity modulation of transistors are not yet fully understood. Here, we exploit both ferroelectric domain-based nonvolatile modulation of Fermi level in transitional metal dichalcogenides (MoS

Identifiers

PMID39516220
PMCPMC11549478

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC-ND
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.