Vertical Electric-Field-Induced Switching from Strong to Asymmetric Strong-Weak Confinement in GaAs Cone-Shell Quantum Dots Using Transparent Al-Doped ZnO Gates.

Ahmed Alshaikh, Jun Peng, Robert Zierold, Robert H Blick, Christian Heyn

Abstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it

0cells of the map it votes in

1citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

Light-Matter Interaction in Nano Systems: Fundamentals and Applications.Nanomaterials (Basel, Switzerland) · 2026
Article

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Ahmed AlshaikhCenter for Hybrid Nanostructures (CHyN), University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany.

Jun PengCenter for Hybrid Nanostructures (CHyN), University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany.ORCID 0009-0008-6282-3762

Robert ZieroldCenter for Hybrid Nanostructures (CHyN), University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany.ORCID 0000-0003-0292-0970

Robert H BlickCenter for Hybrid Nanostructures (CHyN), University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany.

Christian HeynCenter for Hybrid Nanostructures (CHyN), University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany.ORCID 0000-0002-7147-4006

Funding

Deutsche Forschungsgemeinschaft HE 269 2466/2-1Deutsche Forschungsgemeinschaft SFB 986 under project number 192346071European Union's Horizon 270 2020 research and innovation program Marie Skłodowska-Curie Grant No. 721394Federal Ministry of Education and Research ForLab Helios

6 · The paper itself

Abstract

The first part of this work evaluates Al-doped ZnO (AZO) as an optically transparent top-gate material for studies on semiconductor quantum dots. In comparison with conventional Ti gates, samples with AZO gates demonstrate a more than three times higher intensity in the quantum dot emission under comparable excitation conditions. On the other hand, charges inside a process-induced oxide layer at the interface to the semiconductor cause artifacts at gate voltages above U≈ 1 V. The second part describes an optical and simulation study of a vertical electric-field (

Indexed as

Al-doped ZnOexcitonGaAs quantum dotlifetimephotoluminescenceStark shiftstrong and weak confinement

Identifiers

PMID39513792

DOI10.3390/nano14211712

PMCPMC11547971

What OpenQuestion holds

Textmetadata

LicenceCC BY

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.