Evidence map›Paper›PMID 39501928›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024

Perovskite Thin-Film Transistors for Ultra-Low-Voltage Neuromorphic Visions.

Yang Rong, De Yu, Xin Zhang, Tao Wang, Jie Wang, Yuheng Li, Tongpeng Zhao, Ruiqin He, Yuxin Gao, Can Huang and 7 more

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.

0numbers the graph read from it
0cells of the map it votes in
5citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

5 citing papers in PubMed.

  1. Article
  2. Article
  3. Article
  4. Article
  5. Perovskite Thin-Film Transistors for Ultra-Low-Voltage Neuromorphic Visions.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Yang RongMinistry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong, 518055, China.
De YuMinistry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong, 518055, China.
Xin ZhangMinistry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong, 518055, China.
Tao WangMinistry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong, 518055, China.
Jie WangMinistry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong, 518055, China.
Yuheng LiSustainable Energy and Environment Thrust, The Hong Kong University of Science and Technology (Guangzhou), Guangzhou, Guangdong, 511400, China.
Tongpeng ZhaoMinistry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong, 518055, China.
Ruiqin HeMinistry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong, 518055, China.
Yuxin GaoMinistry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong, 518055, China.
Can HuangMinistry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong, 518055, China.
Shumin XiaoMinistry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong, 518055, China.
Jingkai QinSchool of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong, 518055, China.
Sai BaiInstitute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 611731, China.
Huihui ZhuSchool of Physics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 611731, China.
Ao LiuInstitute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 611731, China.
Yimu ChenMinistry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong, 518055, China.ORCID https://orcid.org/0000-0001-5118-8048
Qinghai SongMinistry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong, 518055, China.

Funding

Guangdong Basic and Applied Basic Research Foundation 2022A1515011464Guangdong Basic and Applied Basic Research Foundation 2023B1515020032Key Research and Development Program of Guangdong Province 2023B0101200009National Key Research and Development Program of China 2023YFB2806704National Natural Science Foundation of China 62204069Postdoctoral Fellowship Program of CPSF GZB20230967Shenzhen Fundamental research project GXWD20220811163751003Shenzhen Fundamental research project JCYJ20210324120402006Shenzhen Fundamental research project JCYJ20210324131206018Shenzhen Fundamental research project RCYX20221008092847060
6 · The paper itself

Abstract

Perovskite thin-film transistors (TFTs) simultaneously possessing exceptional carrier transport capabilities, nonvolatile memory effects, and photosensitivity have recently attracted attention in fields of both complementary circuits and neuromorphic computing. Despite continuous performance improvements through additive and composition engineering of the channel materials, the equally crucial dielectric/channel interfaces of perovskite TFTs have remained underexplored. Here, it is demonstrated that engineering the dielectric/channel interface in 2D tin perovskite TFTs not only enhances the performance and operational stability for their utilization in complementary circuits but also enables efficient synaptic behaviors (optical information sensing and storage) under an extremely low operating voltage of -1 mV at the same time. The interface-engineered TFT arrays operating at -1 mV are then demonstrated as the preprocessing hardware for neuromorphic visions with pattern recognition accuracy of 92.2% and long-term memory capability. Such a low operating voltage provides operational feasibility to the design of large-scale-integrated and wearable/implantable neuromorphic hardware.

Indexed as

artificial synapsesinterfaces engineeringlow operating voltageneuromorphic visionsperovskite thin‐film transistors

Identifiers

PMID39501928
PMCPMC11672285

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.