Evidence map›Paper›PMID 39496604›Full record

ArticleNature communications2024

High-throughput screening and machine learning classification of van der Waals dielectrics for 2D nanoelectronics.

Yuhui Li, Guolin Wan, Yongqian Zhu, Jingyu Yang, Yan-Fang Zhang, Jinbo Pan, Shixuan Du

Abstract read
In one paragraph

Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Yuhui Li *Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Guolin Wan *Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Yongqian ZhuBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Jingyu YangBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.ORCID http://orcid.org/0000-0003-2299-3966
Yan-Fang ZhangUniversity of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
Jinbo PanBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China. jbpan@iphy.ac.cn.ORCID http://orcid.org/0000-0003-2612-8232
Shixuan DuBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China. sxdu@iphy.ac.cn.ORCID http://orcid.org/0000-0002-6766-0623

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Van der Waals (vdW) dielectrics are promising for enhancing the performance of nanoscale field-effect transistors (FETs) based on two-dimensional (2D) semiconductors due to their clean interfaces. Ideal vdW dielectrics for 2D FETs require high dielectric constants and proper band alignment with 2D semiconductors. However, high-quality dielectrics remain scarce. Here, we employed a topology-scale algorithm to screen vdW materials consisting of zero-dimensional (0D), one-dimensional (1D), and 2D motifs from Materials Project database. High-throughput first-principles calculations yielded bandgaps and dielectric properties of 189 0D, 81 1D and 252 2D vdW materials. Among which, 9 highly promising dielectric candidates are suitable for MoS

Identifiers

PMID39496604
PMCPMC11535525

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.