ArticleScientific reports2024
Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing.
Article in Scientific reports, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- One-Step, High-Removal-Rate and Low-Damage Chemical Mechanical Polishing of InP Enabled by Hydrolysis Activated PFAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- A novel immersion chemical mechanical polishing device and tailored slurry for processing heavy duty gas turbine compressor blades.Scientific reports · 2026Article
- Comprehensive Structural and Interfacial Characterization of Laser-Sliced SiC Wafers.Materials (Basel, Switzerland) · 2025Article
- Modeling and Validation of Material Removal Based on Rheological Behavior Under Dynamic-Viscosity Nonlinear Coupling Effects.Micromachines · 2025Article
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Authors and funding
7 authors.
Funding
Abstract
Silicon carbide (SiC) is renowned for its exceptional hardness, thermal conductivity, chemical stability, and wear resistance. However, the existing process is difficult to meet the high standards of uniform corrosion in its polishing process and surface roughness and flatness after polishing, new polishing fluids and technique optimization are crucial for development. The study optimized and validated the composition of the polishing fluid used in ultrasonic-assisted chemical-mechanical polishing (UACMP). Abrasives significantly influenced the material removal rate (MRR) and surface roughness (Ra), contributing 67.63% and 56.43%, respectively. Organic bases and pH buffers significantly affected Ra, accounting for 19.66% and 21.44%, respectively. The optimum composition was determined, consisting of triethylamine (3wt%), potassium hydrogen phthalate (1wt%), a composite of silica and alumina abrasive particles (5wt%), and hydrogen peroxide (6wt%), which reduced the Ra from 95 nm to 3 nm. The MRR achieved 25.96 nm/min. In comparison to the 7 nm minimum roughness from the orthogonal test, the optimal scheme's Ra was reduced by 57.14%, leading to a significant enhancement in overall surface quality. In this paper, a new type of additive is added to prepare the polishing liquid, which provides a new idea for the UACMP of SiC and has a great impact.
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