ArticleMicromachines2024
Strain-Induced Frequency Splitting in PT Symmetric Coupled Silicon Resonators.
Article in Micromachines, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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Who cites it
2 citing papers in PubMed.
- Editorial for the Special Issue on MEMS/NEMS Devices and Applications, 3rd Edition.Micromachines · 2026Article
- Editorial for the Special Issue on MEMS/NEMS Devices and Applications, 2nd Edition.Micromachines · 2025Article
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Authors and funding
3 authors.
Funding
Abstract
When two resonators of coupled silicon resonators are identical and the gain on one side is equal to the loss on the other side, a parity-time (PT) symmetric-coupled silicon resonator is formed. As non-Hermitian systems, the PT-symmetric systems have exhibited many special properties and interesting phenomena. This paper proposes the strain-induced frequency splitting in PT symmetry-coupled silicon resonators. The frequency splitting of the PT system caused by strain perturbations is derived and simulated. Theory and simulation both indicate that the PT system is more sensitive to strain perturbation near the exceptional point (EP) point. Then, a feedback circuit is designed to achieve the negative damping required for PT symmetry. Based on a simple silicon-on-insulator (SOI) process, the silicon resonator chip is successfully fabricated. After that, the PT-symmetric-coupled silicon resonators are successfully constructed, and the frequency splitting phenomenon caused by strain is observed experimentally.
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