Evidence map›Paper›PMID 39459062›Full record

ReviewMicromachines2024

A Comprehensive Review of Group-III Nitride Light-Emitting Diodes: From Millimeter to Micro-Nanometer Scales.

Xinye Fan, Jiawang Shi, Yiren Chen, Guoqing Miao, Hong Jiang, Hang Song

Abstract readReview
In one paragraph

Review in Micromachines, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Xinye FanKey Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Jiawang ShiKey Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Yiren ChenKey Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.ORCID 0000-0003-3347-8695
Guoqing MiaoKey Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Hong JiangKey Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Hang SongKey Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

This review describes the development history of group-III nitride light-emitting diodes (LEDs) for over 30 years, which has achieved brilliant achievements and changed people's lifestyles. The development process of group-III nitride LEDs is the sum of challenges and solutions constantly encountered with shrinking size. Therefore, this paper uses these challenges and solutions as clues for review. It begins with reviewing the development of group-III nitride materials and substrates. On this basis, some key technological breakthroughs in the development of group-III nitride LEDs are reviewed, mainly including substrate pretreatment and p-type doping in material growth, the proposal of new device structures such as nano-LED and quantum dot (QD) LED, and the improvement in luminous efficiency, from the initial challenge of high-efficiency blue luminescence to current challenge of high-efficiency ultraviolet (UV) and red luminescence. Then, the development of micro-LEDs based on group-III nitride LEDs is reviewed in detail. As a new type of display device, micro-LED has drawn a great deal of attention and has become a research hotspot in the current international display area. Finally, based on micro-LEDs, the development trend of nano-LEDs is proposed, which is greener and energy-saving and is expected to become a new star in the future display field.

Indexed as

group-III nitrideslight-emitting diodesluminescencemicro-LEDsnano-LEDs

Identifiers

PMID39459062
PMCPMC11509752

What OpenQuestion holds

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Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.