ArticleMicromachines2024
Properties Investigation and Damage Analysis of GaN Photoconductive Semiconductor Switch Based on SiC Substrate.
Article in Micromachines, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
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Who cites it
2 citing papers in PubMed.
- Investigation of Impact-Ionization-Enhanced Effect on SiC Thyristors Triggered by Weak UV Light.Micromachines · 2025Article
- Editorial for the Special Issue on GaN-Based Materials and Devices: Research and Applications.Micromachines · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
6 authors.
Funding
Abstract
The GaN photoconductive semiconductor switches (PCSSs) with low leakage current and large on-state current are suitable for several applications, including fast switching and high-power electromagnetic pulse equipment. This paper demonstrates a high-power GaN lateral PCSS device. An output peak current of 142.2 A is reached with an input voltage of 10.28 kV when the GaN lateral PCSS is intrinsically triggered. In addition, the method of retaining the AlGaN/GaN heterostructure between electrodes on PCSSs is proposed, which results in increasing the output peak current of the PCSS. The damage mechanism of the PCSS caused by a high electric field and high excitation laser energy is analyzed. The obtained results show that the high heat generated by the large current leads to the decomposition of GaN, and thus, the Ga forms a metal conductive path, resulting in the failure of the device.
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Registered trials
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