Evidence map›Paper›PMID 39453022›Full record

ArticleNanomaterials (Basel, Switzerland)2024

Enhancing Charge Trapping Performance of Hafnia Thin Films Using Sequential Plasma Atomic Layer Deposition.

So-Won Kim, Jae-Hoon Yoo, Won-Ji Park, Chan-Hee Lee, Joung-Ho Lee, Jong-Hwan Kim, Sae-Hoon Uhm, Hee-Chul Lee

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

So-Won KimDepartment of Advanced Materials Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.ORCID 0000-0002-7256-1160
Jae-Hoon YooDepartment of Advanced Materials Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.
Won-Ji ParkDepartment of Advanced Materials Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.
Chan-Hee LeeDepartment of Advanced Materials Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.
Joung-Ho LeeKorea Evaluation Institute of Industrial Technology, Seoul 06152, Republic of Korea.
Jong-Hwan KimDepartment of Advanced Materials Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.
Sae-Hoon UhmEN2CORE Technology Inc., Daejeon 18469, Republic of Korea.
Hee-Chul LeeDepartment of Advanced Materials Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.ORCID 0000-0002-2280-8647

Funding

EN2CORE Technology, Inc "Application of Remote Plasma Process to Semiconductor Memory Devices"the Ministry of Trade, Industry & Energy (MOTIE, Korea). 1415187710, RS-2023-00237030, 23027-15FCthe National Research Foundation (NRF) of Korea funded by the Ministry of Education the Priority Research Centers Program (2017R1A6A1A03015562)
6 · The paper itself

Abstract

We aimed to fabricate reliable memory devices using HfO

Indexed as

charge-trapping memoryHfO2interface trapping densitymemory windowretentionsequential plasma ALD

Identifiers

PMID39453022
PMCPMC11509989

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.