ArticleNanomaterials (Basel, Switzerland)2024
Large-Scale Green Method for Synthesizing Ultralong Uniform Tellurium Nanowires for Semiconductor Devices.
Article in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
3 citing papers in PubMed.
- Solution-Shearing Self-Assembly of Hydrothermally Synthesized Tellurium Nanowires for Fabricating Field-Effect Transistors with Wafer-Scale Uniformity.Nanomaterials (Basel, Switzerland) · 2026Article
- Recent Advances in the Synthesis and Application of Tellurium Semiconductors.Nanomaterials (Basel, Switzerland) · 2026Review
- Controlled Synthesis of Tellurium Nanowires and Performance Optimization of Thin-Film Transistors via Percolation Network Engineering.Nanomaterials (Basel, Switzerland) · 2025Article
Corrections and comments
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Authors and funding
6 authors.
Funding
Abstract
This study presents a large-scale green approach for synthesizing ultralong tellurium nanowires with diameters around 13 nm using a solution-based method. By adjusting key synthesis parameters such as the surfactant concentration, temperature, and reaction duration, we achieved high-quality, ultralong Te NWs. These nanowires exhibit properties suitable for use in semiconductor applications, particularly when employed as channel materials in thin-film transistors, displaying a pronounced gate effect with a high switch of up to 10
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Registered trials
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