ArticleSmall (Weinheim an der Bergstrasse, Germany)2024
Electrical Doping in Sc-III-Nitrides: Toward Multifunctional Devices at the Single Device Level.
Article in Small (Weinheim an der Bergstrasse, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
3 citing papers in PubMed.
- A Predictive Theory-Guided and Experimentally Controllable Framework for Rational Design of Two-Dimensional Magnetism: Discovery of a Scandium-Based ScCl Magnet.Small methods · 2026Article
- pH-Self-Buffering and Flocculation-Enabled Nonradical Oxidation via Magnesium Hydroxide-Activated Peroxymonosulfate for Selective Organic Pollutant Degradation.Nanomaterials (Basel, Switzerland) · 2026Article
- Electrical Doping in Sc-III-Nitrides: Toward Multifunctional Devices at the Single Device Level.Small (Weinheim an der Bergstrasse, Germany) · 2024Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
4 authors.
Funding
Abstract
A homogeneous integration of various types of devices using a single material platform is an ideal route toward multifunctional devices at the single-device level for miniaturized, fast, and energy-efficient systems. However, such a single material platform is still missing. Scandium-containing III-nitrides (Sc-III-nitrides) are promising, but their electrical doping properties remain unknown. In this work, the electrical doping in Sc-III-nitrides is investigated and optoelectronic devices using Sc-III-nitrides on silicon (Si) are further demonstrated. The material format of the nanowire is used, with magnesium (Mg) serving as the impurity dopant to control the electrical doping. It is discovered that, by adjusting the Mg doping concentrations, the Sc-III-nitrides can be tuned from n-type to p-type. Device application in light-emitting is further demonstrated using the p-type Sc-III-nitrides as the hole injection layer. The performance comparison between devices using the regrown Sc-containing p-type contact layers and non-Sc-containing p-type contact layers indicates the advantage of Sc incorporation in improving the quality of the regrown p-type layer in a device structure. The electrical doping in Sc-III-nitrides demonstrated in this study represents an important step toward a homogeneous integration of different types of devices using a single material platform.
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.