Evidence map›Paper›PMID 39446606›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024

Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics.

Guitian Qiu, Lingan Kong, Mengjiao Han, Qian Zhang, Majeed Ur Rehman, Jianxian Yi, Lede Xian, Xiankai Lin, Aumber Abbas, Jiwei Chen and 6 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Guitian QiuSchool of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou, 510006, China.
Lingan KongSongshan Lake Materials Laboratory, Dongguan, 523808, China.
Mengjiao HanSongshan Lake Materials Laboratory, Dongguan, 523808, China.
Qian ZhangSchool of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen, 518107, China.
Majeed Ur RehmanSongshan Lake Materials Laboratory, Dongguan, 523808, China.
Jianxian YiSongshan Lake Materials Laboratory, Dongguan, 523808, China.
Lede XianSongshan Lake Materials Laboratory, Dongguan, 523808, China.
Xiankai LinSchool of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou, 510006, China.
Aumber AbbasSongshan Lake Materials Laboratory, Dongguan, 523808, China.
Jiwei ChenSongshan Lake Materials Laboratory, Dongguan, 523808, China.
Yingjie LuoSongshan Lake Materials Laboratory, Dongguan, 523808, China.
Wenbo LiSongshan Lake Materials Laboratory, Dongguan, 523808, China.
Zhongchao WeiSchool of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou, 510006, China.
Hongyun MengSchool of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou, 510006, China.
Xiuliang MaSongshan Lake Materials Laboratory, Dongguan, 523808, China.
Qijie LiangSongshan Lake Materials Laboratory, Dongguan, 523808, China.ORCID https://orcid.org/0000-0003-4252-7997

Funding

Basic and Applied Basic Research Foundation of Guangdong Province 2023A1515012072Basic and Applied Basic Research Foundation of Guangdong Province 2023B1515120041National Natural Science Foundation of China 52202183National Natural Science Foundation of China 52350410475National Natural Science Foundation of China 62304146Shenzhen Science and Technology Innovation Program 202206193000001the Open Project Fund from Guangdong Provincial Key Laboratory of Materials and Technology for Energy Conversion, Guangdong Technion-Israel Institute of Technology MATEC2023KF003
6 · The paper itself

Abstract

2D semiconductors show promise as a competitive candidate for developing future integrated circuits due to their immunity to short-channel effects and high carrier mobility at atomic layer thicknesses. The inherent defects and Fermi level pinning effect lead to n-type transport characteristics in most 2D semiconductors, while unstable and unsustainable p-type doping by various strategies hinders their application in many areas, such as complementary metal-oxide-semiconductor (CMOS) devices. In this study, an intralayer/interlayer codoping strategy is introduced that stabilizes p-type doping in 2D semiconductors. By incorporating oppositely charged ions (F and Li) with the intralayer/interlayer of 2D semiconductors, remarkable p-type doping in WSe

Indexed as

CMOS deviceshole dopingintralayer/interlayer codopinglarge‐area devicessuperior air stability

Identifiers

PMID39446606
PMCPMC11672281

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.