Evidence map›Paper›PMID 39423267›Full record

ArticleScience advances2024

Van der Waals semiconductor InSe plastifies by martensitic transformation.

Yandong Sun, Yupeng Ma, Jin-Yu Zhang, Tian-Ran Wei, Xun Shi, David Rodney, Ben Xu

Abstract read
In one paragraph

Article in Science advances, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Article
  2. Article
  3. Room-temperature plasticity in AgNature communications · 2026
    Article
  4. Substantial planar plastic anisotropy in inorganic MgProceedings of the National Academy of Sciences of the United States of America · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Yandong SunGraduate School of China Academy of Engineering Physics, Beijing 100193, China.ORCID 0000-0003-4491-208X
Yupeng MaState Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.ORCID 0009-0004-8228-180X
Jin-Yu ZhangUniv. Lyon, CNRS, Université Claude Bernard Lyon 1, Institut Lumière Matière, UMR5306, Villeurbanne 69622, France.ORCID 0000-0003-2183-3004
Tian-Ran WeiState Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.ORCID 0000-0002-5011-0932
Xun ShiState Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.ORCID 0000-0002-8086-6407
David RodneyUniv. Lyon, CNRS, Université Claude Bernard Lyon 1, Institut Lumière Matière, UMR5306, Villeurbanne 69622, France.ORCID 0000-0001-5311-0754
Ben XuGraduate School of China Academy of Engineering Physics, Beijing 100193, China.ORCID 0000-0002-1557-0052

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Inorganic semiconductor materials are crucial for modern technologies, but their brittleness and limited processability hinder the development of flexible, wearable, and miniaturized electronics. The recent discovery of room-temperature plasticity in some inorganic semiconductors offers a promising solution, but the deformation mechanisms remain controversial. Here, we investigate the deformation of indium selenide, a two-dimensional van der Waals semiconductor with substantial plasticity. By developing a machine-learned deep potential, we perform atomistic simulations that capture the deformation features of hexagonal indium selenide upon out-of-plane compression. Unexpectedly, we find that indium selenide plastifies through a martensitic transformation; that is, the layered hexagonal structure is converted to a tetragonal lattice with specific orientation relationship. This observation is corroborated by high-resolution experimental observations and theory. It suggests a change of paradigm, where the design of new plastically deformable inorganic semiconductors can focus on compositions and structures that facilitate phase transformations, going beyond the conventional dislocation slip.

Identifiers

PMID39423267
PMCPMC11488537

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.